Asymmetry gap in the electronic band structure of bilayer graphene

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Asymmetry gap in the electronic band structure of bilayer graphene

A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap ∆ between the conduction and valence bands. In particular, a self consistent Hartree approximation is used to describe imperfect screening of an external gate, employed primarily to control the density n of electrons on the bilayer, resu...

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ژورنال

عنوان ژورنال: Physical Review B

سال: 2006

ISSN: 1098-0121,1550-235X

DOI: 10.1103/physrevb.74.161403